The worst oral presenttaion, ever!

I've finished all the presentations this evening. I think, my talk is the worst of all guys presenting at this conference... I was so nervous, and I've to see my text through the entire presentation. And, I exceed the 15 minutes time... they don't even give any question time for me because there's no time anymore. Everybody who see my face seems like saying, "You're the worst guy today!".

By the way, all have finished... and everybody who I met during the poster session (after the oral presentation) agrees that our data on Si(111) is the best result in the world! I think, here, they're good at presentations, but, their results are bad! In other words, they're good at presenting bad results! And the worse thing is they fabricate their results to look good! They do TEM, but when I asked about why their dislocation density is so good, they told me they estimate the dislocations by AFM. I wonder why they estimate it by AFM when they already do TEM (she is a professor, the meeting chair though). Seems like she don't like me much because I said during the oral presentaton that we're one of the few laboratory in the world who could achieve crack-free GaN on Si, and nobody attending this meeting could achieve that. The professor also did LED on Si, but she told me the IQE is just around 12% (no data shown though). Still, we're the best! Haha...

I like a professor (Prof Wang) from National ????Chung-Tao???? University from Taiwan. He advised me about his paper published on APL last year about threading dislocations, and he got almost the same result as mine. He's a very nice guy, we had a little discussions after my oral presentations. I like him very much.

The poster presentation went well though. There're people working with LEDs/devices who like it. And I had good discussions with them. A guy from Stanford who did a very good oral presentation during the session also spend his time at my poster. Seems like he's interested in what we're doing (maybe interested to copy my methods too! Haha..). I understand that he's also working on Si substrate for GaN. There's also a women working on GaN nanowires who shows her interest in my LED too. And, a professor from National Soul University... I think, he want to know comparison between LED grown on Si and sapphire. I didn't have experience working with sapphire though, so the simple question is a little tough for me to answer. But, I said it's 5-10 times higher intensity on sapphire, but the saturation current is 2 times higher for LED on Si. There're plus and minus in everything...

Frankly speaking, I met many good people during the poster session :)